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High Voltage IGBT
Preliminary Data Sheet
IXGH 32N170 VCES IXGT 32N170 IC25 VCE(sat) tfi(typ)
= 1700 V = 75 A = 3.3 V = 250 ns
Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg
Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGE = 1 M Continuous Transient TC = 25C TC = 90C TC = 25C, 1 ms VGE = 15 V, TVJ = 125C, RG = 5 Clamped inductive load TC = 25C
Maximum Ratings 1700 1700 20 30 75 32 200 ICM = 90 @ 0.8 VCES 350 -55 ... +150 150 -55 ... +150 300 260 V V V V A A A A
TO-268 (IXGT)
G E C (TAB)
TO-247 AD (IXGH)
G
C (TAB) C E C = Collector, TAB = Collector
W C C C C C
G = Gate, E = Emitter,
Features International standard packages JEDEC TO-268 and JEDEC TO-247 AD High current handling capability MOS Gate turn-on - drive simplicity Rugged NPT structure Molding epoxies meet UL 94 V-0 flammability classification Applications Capacitor discharge & pulser circuits AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switched-mode and resonant-mode power supplies Advantages High power density Suitable for surface mounting Easy to mount with 1 screw, (isolated mounting screw hole)
Maximum Lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Maximum Tab temperature for soldering SMD devices for 10 s Md Weight Mounting torque (M3)
1.13/10Nm/lb.in. TO-247 AD TO-268 6 4 g g
Symbol
Test Conditions
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 1700 3.0 TJ = 25C TJ = 125C 5.0 50 1 100 TJ = 25C TJ = 125C 2.5 3.0 3.3 V V A mA nA V V
BVCES VGE(th) ICES IGES VCE(sat)
IC IC
= 250 A, VGE = 0 V = 250 A, VCE = VGE
VCE = 0.8 * VCES VGE = 0 V VCE = 0 V, VGE = 20 V IC = IC90, VGE = 15 V
(c) 2003 IXYS All rights reserved
DS98941B(11/03)
IXGH 32N170 IXGT 32N170
Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 22 30 120 3500 VCE = 25 V, VGE = 0 V, f = 1 MHz 165 40 155 IC = IC90, VGE = 15 V, VCE = 0.5 VCES 30 51 Inductive load, TJ = 25C IC = IC90, VGE = 15 V VCE = 0.6 VCES, RG = Roff = 2.7 45 38 270 250 11 Inductive load, TJ = 125C IC = IC90, VGE = 15 V VCE = 0.6 VCES, RG = Roff = 2.7 48 42 6.0 360 560 14 500 500 S A pF pF pF nC nC nC ns ns ns ns
Dim.
e P
TO-247 AD Outline
gfs IC(ON) Cies Coes Cres Qg Qge Qgc td(on) tri td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCK
IC = IC90; VCE = 10 V, Pulse test, t 300 s, duty cycle 2 % VGE = 10V, VCE = 10V
20 mJ ns ns mJ ns ns mJ 0.35 K/W
Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC
Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC
TO-268 Outline
(TO-247)
0.25
K/W
Dim.
Min Recommended Footprint
A A1 A2 b b2 C D E E1 e H L L1 L2 L3 L4
Millimeter Min. Max. 4.9 5.1 2.7 2.9 .02 .25 1.15 1.45 1.9 2.1 .4 .65 13.80 14.00 15.85 16.05 13.3 13.6 5.45 BSC 18.70 19.10 2.40 2.70 1.20 1.40 1.00 1.15 0.25 BSC 3.80 4.10
Inches Min. Max. .193 .201 .106 .114 .001 .010 .045 .057 .75 .83 .016 .026 .543 .551 .624 .632 .524 .535 .215 BSC .736 .752 .094 .106 .047 .055 .039 .045 .010 BSC .150 .161
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 6,583,505
IXGH 32N170 IXGT 32N170
Fig. 1. Output Characte ristics @ 25 Deg. C
64 56 48 VGE = 17V 15V 13V 11V 9V 240 210 180
Fig. 2. Extended Output Characte ristics @ 25 de g. C
VGE = 17V 15V 13V
I C - Amperes
I C - Amperes
40 32 24 16 8 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
150 120 90 60 30 0
11V
9V
7V
7V
V C E - Volts Fig. 3. Output Characteristics @ 125 Deg. C
64 56 48 VGE = 17V 15V 13V 11V 1.8
0
2
4
V C E - Volts
6
8
10
12
14
Fig. 4. De pende nce of V CE(sat) on Tem perature
V GE = 15V
1.6
V C E (sat)- Normalized
9V
I C = 64A 1.4
I C - Amperes
40 32 24 7V 16 8 0 0 1 2 3 4 5 6
1.2 1 I C = 32A
0.8 0.6 -50 -25 0 25 50 75
I C = 16A
100
125
150
V CE - Volts Fig. 5. Collector-to-Em itter Voltage vs . Gate-to-Em iiter voltage
8 7 6 TJ = 25C 100 90 80
TJ - Degrees Centigrade Fig. 6. Input Adm ittance
I C - Amperes
70 60 50 40 30 20 TJ = 125C 25C -40C
VC E - Volts
5 4 3 2 1 6 7 8 9 10 11 12 13 14 15 16 17 I C = 64A 32A
16A
10 0 5
6
7
8
9
10
V G E - Volts
V G E - Volts
(c) 2003 IXYS All rights reserved
IXGH 32N170 IXGT 32N170
Fig. 7. Transconductance
45 40 35 TJ = -40C 25C 125C 25 23 21 19 17 15 13 11 0 16 32 48 64 80 96 0 10 20 30 40 50 I C = 32A TJ = 125C VGE = 15V VCE = 1020V
Fig. 8. Dependence of Eoff on RG
I C = 64A
g f s - Siemens
30 25 20 15 10 5 0
E off - milliJoules
I C = 16A
I C - Amperes
R G - Ohms Fig. 10. Dependence of Eoff on Tem perature
22 R G = 3 R G = 15 - - - - VGE = 15V VCE = 1020V
Fig. 9. Dependence of Eoff on Ic
22 20 R G = 3 R G = 15 - - - - VGE = 15V VCE = 1020V
20 TJ = 125C 18 16 14 12 10 8
I C = 64A
E off - MilliJoules
16 14 12 10 8 16 24 32 40 48 56 64 TJ = 25C
E off - milliJoules
18
I C = 32A
I C = 16A
25
35
45
55
65
75
85
95
105 115 125
I C - Amperes Fig. 11. Gate Charge
15 VCE = 850V IC = 32A 0mA IG= 1 10000
TJ - Degrees Centigrade Fig. 12. Capacitance
f = 1 MHz
12
Capacitance - p F
C ies 1000
VG E - Volts
9
C oes 100 C res
6
3
0 0 30 60 90 120 150
10 0 5 10 15
Q G - nanoCoulombs
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents:
V C E - Volts
20
25
30
35
40
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 6,583,505
IXGH 32N170 IXGT 32N170
Fig. 1 3 . M a x im um Tra ns ie nt The r m a l Re s is ta nc e
0.4
0.3
R (th) J C - (C/W)
0.2
0.1
0 1 10
Puls e W idth - millis ec onds
1 00
10 0 0
(c) 2003 IXYS All rights reserved

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